– Rigorously selected 3D NAND flash for great performance
– SLC Caching and DRAM Cache buffer technology improve R/W performance
– LDPC ECC technology and E2E (end to end) data protection prevent data R/W error and guarantees reliability
– Support TRIM command, wear leveling and garbage collection technology to enhance lifetime
– NCQ command and data shaping increase efficiency and lifespan
– S.M.A.R.T. monitoring system
Specifications
– Interface: PCIe Gen 4×4
– Support: NVMe 1.3
– Support: M.2 M key
– Capacity: 500GB
– Sequential R/W Speed: up to 5000MB/s / 2500MB/s
– Random R/W 4K IOPs: up to 400K / 500K
– TBW (SSD Endurance): 850TB
– Power Consumption: 6.3W
– Shock resistance: 1500G /0.5ms
– MTBF: 1.700.000 hours
– Uncorrectable Bit Error Rate (UBER): < 1 sector per 1016 bits read
- Dimension (W×L): 22×80 mm
- Weight: 8.5g
- Voltage: 3.3V
- Operating temperature: 0C to 70C
- SLC Caching: Yes
- DRAM Cache Buffer: Yes
Recenzije
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